Growth of metal-ceramic interfaces by molecular beam epitaxy
- 31 December 1992
- journal article
- Published by Elsevier in Acta Metallurgica et Materialia
- Vol. 40, S45-S52
- https://doi.org/10.1016/0956-7151(92)90262-d
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Slip requirements for coherent tilt of hcp epitaxial crystalsPhysical Review B, 1991
- Tuned Tilt of Epitaxial CrystalsMRS Bulletin, 1991
- Nucleation processes in the growth of hcp titaniumPhysical Review Letters, 1991
- Low-temperature growth of MgO by molecular-beam epitaxyPhysical Review B, 1990
- Growth of alkali halides from molecular beams: Global growth characteristicsPhysical Review Letters, 1989
- Formation of artificial superlattice composed of ultrathin layers of CoO and NiO by reactive evaporationJournal of Applied Physics, 1984
- Untersuchung der kondensation und verdampfung von alkalihalogenidkristallen mit molekularstrahlmethodenJournal of Crystal Growth, 1980
- Reactive Condensation and Magnetic Properties of Iron Oxide FilmsJapanese Journal of Applied Physics, 1978
- Alkali halide surfaces: Potential energy surfaces for diffusion and dimer dissociationsThe Journal of Chemical Physics, 1977
- Alkali halide surfaces: Adsorbate binding energies and structures at surface defectsThe Journal of Chemical Physics, 1977