Spectrum studies on a GaAs-AlGaAs multi-quantum-well laser diode grown by molecular beam epitaxy

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Abstract
Spontaneous and stimulated emission spectrum and the different characteristics between TE and TM polarizations were investigated on a GaAs–AlGaAs multi-quantum-well (MQW) laser diode grown by molecular beam epitaxy. The MQW laser lases at 38 meV below the photoluminescence peak energy corresponding to the lowest confined electron to heavy hole recombination energy E1h, calculated using the Kronig–Penney model. However, this energy separation cannot be interpreted in terms of the LO-phonon assisted recombination which is usually accepted. The LO-phonon assisted recombination model can be ruled out by comparing the spontaneous emission and the stimulated emission for various injection current levels. The emission energy of the TE polarization was lower than that of the TM polarization. The intensity of the TE is much larger than the TM polarization. These differences can be interpreted in terms of the selection rule for the dipole recombination between confined electron to heavy hole and electron to light hole bands.