The Fermi energy and screening length in n-type GaAs

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Abstract
The Fermi energy, EF, and the screening length, Q−1, in heavily doped n-type GaAs are calculated using the impurity band tail density of states derived recently by Sa-yakanit and Glyde. This density of states agrees with Halperin and Lax's result at low energies and can be extended to higher energies. The resulting EF and Q−1 agree well with values computed by Hwang using the Halperin and Lax density plus a somewhat arbitrary extrapolation. Compensation with attractive impurities is also introduced to lower EF and increase its sensitivity to the band tail density of states. However, EF can be lowered only a little without violating the Thomas–Fermi approximation upon which the concept of a screening length is based.

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