DARPA, SDI, and GaAs

• 1 October 1986
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Computer
• Vol. 19  (10) , 17-19
• https://doi.org/10.1109/MC.1986.1663064

Abstract

Keywords

• GALLIUM ARSENIDE
• SILICON
• SIGNAL PROCESSING
• CIRCUITS
• SUBSTRATES
• SURFACE CHARGING
• GERMANIUM
• PHOTONIC BAND GAP
• TEMPERATURE DISTRIBUTION
• FETS