(InGa)AsGaAs strained layer quantum wells — excitonic properties and electronic structure
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 310-313
- https://doi.org/10.1016/0039-6028(90)90316-z
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Theory of heavy-hole magnetoexcitons in GaAs-(Al,Ga)As quantum-well heterostructuresPhysical Review B, 1988
- Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor depositionApplied Physics Letters, 1988
- Unambiguous observation of thestate of the light- and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structuresPhysical Review B, 1986