Effects of Oxygen Concentration on Growth of Bi4Ti3O12 Thin Films by Metalorganic Chemical Vapor Deposition
- 1 September 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (9S) , 5215-5218
- https://doi.org/10.1143/jjap.33.5215
Abstract
The effects of oxygen concentration on the growth of Bi4Ti3O12 thin films by metalorganic chemical vapor deposition (MOCVD) were investigated, using Bi(C6H5)3 and Ti( i-OC3H7)4 precursors, c-axis-oriented Bi4Ti3O12 thin films were obtained at an oxygen gas flow rate of 200 sccm and a substrate temperature of 600° C on Pt(111)/ SiO2/Si(100) substrates without Bi2Ti2O7 buffer layers. This film shows remanent polarization of 1.3 µ C/cm2, coercive field of 25 kV/cm, dielectric constant of 130 and leakage current density as low as 10-8–10-7 A/cm2.Keywords
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