Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O5+ Ion Backscattering
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A) , L932
- https://doi.org/10.1143/jjap.24.l932
Abstract
Atomic migration of metallic atoms in the interfaces of Au-Si and Ni-Si is investigated with emphasis on the difference among c-Si, a-Si:H/c-Si and a-Si:F:H/c-Si. 40 MeV-O5+ ion backscattering spectra of the Au-Si system heat-treated at 350°C for 30 min indicate that Au atoms of more than 1020cm-3 were distributed in Si up to a depth of about 1 µm and 3 µm for a-Si:F:H/c-Si and a-Si:H/c-Si, respectively. Because the thickness of a-Si is about 5000 Å, this means that a large amount of Au migrated not only in the a-Si film but also into the substrate of c-Si even below the eutectic point, while Au-migration was not observed in the case of direct contact interface between Au and c-Si.Keywords
This publication has 1 reference indexed in Scilit:
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976