Demonstration of the tunnel-diode effect on an atomic scale
- 1 November 1989
- journal article
- letter
- Published by Springer Nature in Nature
- Vol. 342 (6247) , 258-260
- https://doi.org/10.1038/342258a0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Tunneling spectroscopy of the Si(111)2 × 1 surfacePublished by Elsevier ,2002
- Adsorption of boron on Si(111): Its effect on surface electronic states and reconstructionPhysical Review Letters, 1989
- Surface doping and stabilization of Si(111) with boronPhysical Review Letters, 1989
- Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional dopingPhysical Review Letters, 1989
- Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES studySurface Science, 1988
- Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfacesSurface Science, 1988
- Spectroscopy of single atoms in the scanning tunneling microscopePhysical Review B, 1986
- Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopyJournal of Vacuum Science & Technology A, 1985
- Long journey into tunnelingReviews of Modern Physics, 1974
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958