Band structure of cadmium arsenide at room temperature

Electron effective-mass values obtained from room-temperature magneto-Seebeck and Hall measurements on ${\mathrm{Cd}}_3$ ${\mathrm{As}}_2$ have been gathered from the literature. Using Kane's model for an $\alpha -\mathrm{Sn}$-type inverted electronic energy band structure, the dispersion related for the conduction band has been obtained along with a ${\Gamma }_8-{\Gamma }_6$ energy gap of 0.19 eV. Combining these results with the available room-temperature optical data, the relative positions of other bands have been obtained. The heavy-hole valence band, whose maximum is displaced from $\Gamma$ by ∼ 10% of the distance to the Brillouin-zone edge, has a possible small overlap with the conduction band. These two ${\Gamma }_8$ bands are split at $\Gamma$ by a residual gap of ∼ 0.04 eV. There is a second conduction band whose minimum at $\Gamma$ is ∼ 0.6 eV above the ${\Gamma }_8$ valence band and perhaps a third one ∼ 0.4 eV above the latter.