Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Publisher Website
Google Scholar
Abstract
Thin films of silicon dioxide were deposited at low substrate temperatures (2, through its etch rate in a buffered hydrofluoric solution, index of refraction, Fourier transform infrared spectroscopy, and Rutherford backscattering spectrometry. Through the application of rf substrate bias the deposited material properties approached that of thermally grown oxide. The feed to the substrate chamber was 40 sccm of a 2.0% silane in He. The large quantity of He in the chamber is credited with making the material more thermal‐like.