Noise analysis of silicon carbide JFETs
- 1 May 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (5) , 971-975
- https://doi.org/10.1016/0038-1101(95)98662-m
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitorsJournal of Applied Physics, 1994
- Electrical and optical characterization of SiCPhysica B: Condensed Matter, 1993
- Thermal oxidation and electrical properties of silicon carbide metal-oxide-semiconductor structuresJournal of Applied Physics, 1993
- High temperature operation of α-silicon carbide buried-gate junction field-effect transistorsElectronics Letters, 1991
- Origin of 1/f3/2noise in GaAs thin-film resistors and MESFET'sIEEE Transactions on Electron Devices, 1987