The interpretation of spreading resistance depth profiles for submicron devices is seriously affected by the fact that the spreading resistance technique measures an electrical on‐bevel carrier profile which may be quite different from the underlying atomic dopant profile. A one‐dimensional Poisson model has been implemented for simulating the carrier spilling effects responsible for these differences. The model is able to explain anomalies such as the absence of a junction peak for certain types of abrupt junctions, the observed discrepancies between implanted and measured doses for low‐dose implants, and the substantial differences in junction depth found between identical implants in same and opposite type material. The model has further led to the construction of a new correction procedure for spreading resistance measurements which corrects spreading resistance data into a dopant profile taking into account all the effects of beveling, carrier spilling, and the correct mobility values.