23 cm long Bi 2 O 3 -based EDFA for picosecond pulse amplification with 80 nm gain bandwidth
- 18 September 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (19) , 1374-1375
- https://doi.org/10.1049/el:20030877
Abstract
Amplification of a 1 ps pulse train in a 22.7 cm Bismuth oxide (Bi2O3)-based erbium doped fibre amplifier (EDFA) is reported. An amplification bandwidth of 80 nm, from 1520 to 1600 nm is demonstrated. Because of the short length, amplification of picosecond pulses is achieved without pulse broadening over a wide wavelength range.Keywords
This publication has 3 references indexed in Scilit:
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- Gain-flattened tellurite-based EDFA with a flat amplification bandwidth of 76 nmIEEE Photonics Technology Letters, 1998