Impact ionization rates for electrons and holes in Hg0.3Cd0.7Te in avalanche photodiodes for optical fiber transmission systems at λ = 1.3 μm
- 1 July 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2) , 496-503
- https://doi.org/10.1016/0022-0248(85)90197-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Bandgap spin-orbit splitting resonance effects in Hg1-xCdxTe alloysJournal of Crystal Growth, 1982
- Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficientsIEEE Journal of Quantum Electronics, 1981
- Electroreflectance Study of CdxHg1-xTeJournal of the Physics Society Japan, 1973
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966