Electron Spin Resonance Parameters in 6H Polytype of Silicon Carbide Crystal Doped with Boron
- 1 October 1965
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 20 (10) , 1827-1833
- https://doi.org/10.1143/jpsj.20.1827
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Electrical Properties of Hexagonal SiC Doped with N, B or AlPublished by Springer Nature ,1958