High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates
- 23 January 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (4) , 442-444
- https://doi.org/10.1063/1.114050
Abstract
We report the molecular beam epitaxy growth of (Al) GaAsSb/AlAsSb Bragg reflectors around the 1.55 μm wavelength region. Mirrors with 96% reflectivity have been achieved by using ten pairs of quarter wavelength layers. This demonstrates the capability of the (Al) GaAsSb/AlAsSb system to achieve efficient Bragg mirrors lattice matched to InP substrates.Keywords
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