Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs

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Abstract
The redistribution of Cr is shown to be responsible for the formation of deep trails in the electron density profiles of certain semi-insulating GaAs substrates following Se ion implantation and annealing, and for the formation of spurious n-type conducting layers in those substrates following encapsulation with Si3N4and annealing without implantation.