Investigation of GaN deposition on Si, Al2O3, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction
- 1 May 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (3) , 2357-2361
- https://doi.org/10.1116/1.588860
Abstract
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