Long term storage of inversion holes at a superlattice/GaAs interface
- 24 November 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (21) , 1471-1472
- https://doi.org/10.1063/1.97306
Abstract
We report an investigation of the long term retention characteristic of a hole inversion layer at the interface between an AlAs/GaAs superlattice and GaAs in the dark. The retention time constant at 77 K is measured to be 34 h. From the temperature dependence of the retention time constant, an effective valence-band discontinuity of 0.17 eV is obtained.Keywords
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