720-780 nm AlGaAs/GaAs DFB lasers with InGaAsP waveguiding layers

• 1 January 1987
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 788-791
• https://doi.org/10.1109/iedm.1987.191550

Abstract

Keywords

• EPITAXIAL GROWTH
• GALLIUM ARSENIDE
• LAB ON A CHIP
• ROOM TEMPERATURE
• LATTICES