High-power millimeter wave IMPATT oscillators with both hole and electron drift spaces made by ion implantation

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Abstract
CW powers of 640 mW at 50 GHz have been obtained from double-drift region IMPATT diodes. This result represents the highest product of CW power times frequency squared obtained to date from any IMPATT diode. The diodes are p+pnn+structures and have both hole and electron drift spaces. The systematic fabrication (by ion implantation) and the evaluation of the dc and millimeter wave characteristics are presented.