Substrate bias effect for C-MOS operational amplifier using SIMOX technology
- 20 January 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (2) , 36-37
- https://doi.org/10.1049/el:19830027
Abstract
The substrate bias effect for SIMOX devices is described. By setting the substrate bias voltage to the accumulation mode in the bulk, the kink onset voltage for the N-ch MOSFET has been found to increase. Open-loop voltage gain for a C-MOS two-stage operational amplifier has been enhanced up to 65 dB.Keywords
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