Initial stage growth of In and A1 on a single-domain Si(001)2 × 1 surface
- 10 November 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 341 (3) , 328-334
- https://doi.org/10.1016/0039-6028(95)00688-5
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Structure of a Si(100)2×2-Ga surfacePhysical Review B, 1994
- Resolving the Ga Ad-Dimer Location and Orientation on the Si(100) SurfacePhysical Review Letters, 1994
- Observation of Initial Growth of In on Silicon(100) SurfaceJapanese Journal of Applied Physics, 1994
- Structures of low-coverage phases of Al on the Si(100) surface observed by scanning tunneling microscopyPhysical Review B, 1993
- Structural determination of Si(100)2×2-Al by tensor LEEDPhysical Review B, 1993
- Ag on the Si(001) surface: Growth of the first monolayer at room temperaturePhysical Review B, 1993
- Structure of the Si(100)-(2×2)In surfacePhysical Review B, 1993
- Structure of low-coverage phases of Al, Ga, and In on Si(100)Physical Review B, 1991
- Aluminum on the Si(100) surface: Growth of the first monolayerPhysical Review B, 1991
- Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and AsPhysical Review B, 1987