Nature of defects in heavily Te-doped GaAs
- 1 January 1983
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 18 (8) , 475-478
- https://doi.org/10.1051/rphysap:01983001808047500
Abstract
Heavily Te-doped GaAs has been studied by 125Te Mössbauer spectroscopy and transmission electron microscopy (TEM). It is shown that for ND-N A > 1019 cm-3, microprecipitates are observed along dislocations loops on TEM micrographs whereas a quadrupole split second site appears in Mössbauer spectra. Both features are consistent with the existence of microprecipitates of gallium telluride, probably Ga2Te3Keywords
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