Improvement of on-resistance of MOS-gated devices
- 24 June 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (13) , 546-547
- https://doi.org/10.1049/el:19820370
Abstract
The drain-current/drain-voltage characteristics of a MOS-gated four-layered device are compared in different circuit configurations. A significant improvement of the on-resistance with MOS-gate control is observed under working conditions different from those already used.Keywords
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