Ratio of TO- to LA-phonon assisted luminescence intensities from the exciton and electron-hole condensate in Ge
- 31 May 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 18 (11) , 1485-1487
- https://doi.org/10.1016/0038-1098(76)90375-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Temperature Dependence of Silicon Luminescence Due to Splitting of the Indirect Ground StatePhysical Review Letters, 1975
- Mass Reversal Effect in the Split Indirect Exciton of GePhysical Review Letters, 1975
- Exciton dispersion in degenerate bandsPhysical Review B, 1975
- Indirect Exciton Absorption in GermaniumJournal of the Physics Society Japan, 1974
- Luminescence line shape of free excitons in pure GeSolid State Communications, 1973
- Energy Levels of Indirect Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971
- Selection Rules Connecting Different Points in the Brillouin ZonePhysical Review B, 1961
- Exciton energy levels in germanium and siliconJournal of Physics and Chemistry of Solids, 1960
- Fine Structure in the Zeeman Effect of Excitons in GermaniumPhysical Review Letters, 1959