Electrodiffusion of shallow donors in CdS crystals
- 10 June 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (16) , 2975-2978
- https://doi.org/10.1088/0022-3719/13/16/007
Abstract
Electrodiffusion of lattice defects in CdS, CdS:Li, CdS:Cu crystals and its effect on the photoelectric and luminescent properties of these crystals is investigated. Evidence is found to show that in the temperature range 250-400K, shallow donors, namely Lii and Cdi, drift in an electric field.Keywords
This publication has 2 references indexed in Scilit:
- Optical Studies of Shallow Acceptors in CdS and CdSePhysical Review B, 1971
- Application of bound‐exciton optical spectra in the study of radiation damage in crystalsPhysica Status Solidi (b), 1966