Dual-gate charge sensing in charge-coupled devices
- 1 January 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Journal on Solidstate and Electron Devices
- Vol. 2 (6) , 207-214
- https://doi.org/10.1049/ij-ssed.1978.0058
Abstract
A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.Keywords
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