Effect of gate metal on polymer transistor with glass substrate
- 11 December 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (24)
- https://doi.org/10.1063/1.2403921
Abstract
Poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs) are fabricated on glass substrates with SiO2 as a gate dielectric over the gate. Indium tin oxide (ITO), Al, and Cr are employed as gate metals. For spin-coated FET, the mobility increases from 10−4–10−5cm2∕Vs for ITO and Al gates to 10−2cm2∕Vs for Cr gate. After O2 plasma treatment, the SiO2 roughness can be made as low as 0.7nm. The mobility is further improved up to 0.3cm2∕Vs by dip-coating P3HT. "Crossed rods" such as morphology can be observed in dip-coated FET with high mobility, indicating high degree of self-assembly facilitated by the flat SiO2 surface over Cr gate.Keywords
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