Conformal vapor phase epitaxy
- 11 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (24) , 2544-2546
- https://doi.org/10.1063/1.101976
Abstract
A novel technique of shaped crystal growth from the vapor is presented, which we call conformal vapor phase epitaxy. Using selective epitaxy as a main ingredient, we have obtained a conformal Si single‐crystal growth between two SiO2 films. Since vertical growth is physically impeded by a SiO2 cap, lateral to vertical growth ratios (overgrowth ratios) can be controlled at will. Using a standard chemical vapor deposition reactor, submicron thick (100)Si layers have been laterally grown with a totally controlled overgrowth ratio >20.Keywords
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