Structural characterization of Zn1−xCoxSe epilayers on GaAs(001)

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Abstract
We have grown a Co-based diluted magnetic semiconductor, the wide-gap compound Zn1−xCoxSe, by molecular-beam epitaxy on GaAs(001) substrates. We report here a detailed study of the structure and crystalline quality of these epilayers as obtained from a variety of x-ray diffraction and transmission electron microscopy (TEM) techniques. The films grow as (001) single-crystal zinc-blende epilayers which exhibit some degree of tetragonal distortion for the full range of Co concentrations (x≲0.1) and thicknesses (0.1–2.6 μm) studied. X-ray double-crystal rocking curve and topography measurements show that the crystalline quality of the thinner films (0.3 μm) approaches that of the GaAs substrates. Cross-sectional and plane-view TEM results indicate a low dislocation density and the absence of twin formation within the epilayers. High-resolution lattice images show that the interface between the epilayer and substrate is coherent and atomically abrupt.

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