The passivation of electrically active sites on the surface of crystalline silicon by fluorination

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Abstract
A nonoxide surface passivation for crystalline silicon is described. It involves the fluorination of the silicon surface. Characterization by photoconductive lifetime measurements and C–V measurements on MIS structures indicate that the fluorinated silicon surface is extraordinarily electrically passive, ≲1010 traps per cm2. Our technique for producing such high quality surfaces is described as is a novel gate insulator structure employing organic thin films. Potential device advantages of this alternative to oxide technology are also discussed.
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