Measuring Ge segregation by real-time stress monitoring during Si1−xGex molecular beam epitaxy
- 16 December 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (25) , 3830-3832
- https://doi.org/10.1063/1.117119
Abstract
Real-time stress measurements during Si1−xGex/Si molecular beam epitaxy are used to dynamically monitor Ge surface segregation. Segregation during alloy growth produces a change in the surface stress that offsets the coherency stress in the pseudomorphic film. We outline a method for analyzing the stress evolution kinetics to determine the alloy composition profile resulting from segregation.Keywords
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