The preparation and some electronic properties of a-ZnSe
- 1 September 1977
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 55 (17) , 1512-1517
- https://doi.org/10.1139/p77-192
Abstract
This paper describes the preparation of mature amorphous ZnSe, obtained in thin film form by vapor deposition of the ZnSe compound. Room temperature resistivities of annealed a-ZnSe samples are ~1013 Ω cm. The material is n-type and the dc conductivity is consistent with a hopping conduction mechanism at temperatures up to the rapid crystallization temperatures which occur around 180 °C and higher. The activation energy for hopping at the band edge is 0.9 ± 0.05 eV and it is 0.09 ± 0.02 eV for hopping at the Fermi level, Ef.Variable range hopping occurs at Ef, below 270 K, and the density of states N(Ef) at Ef is of the order of 1017 (cm3 eV)−1. Annealing a-ZnSe prior to obtaining fully matured samples reduces N(Ef).Keywords
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