Determination of the conduction-band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance-voltage measurements
- 15 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4) , 377-379
- https://doi.org/10.1063/1.95637
Abstract
The relation between the conduction‐band discontinuity ΔEc and the Al composition x of refined GaAs/AsxGa1−xAs (xEc=0.67ΔEg, is different from Dingle’s rule. The interface charge density σ of a series of the samples was also investigated in relation to the reliability of the determination of ΔEc. It was found that σ less than 1×1011/cm2 is required to determine ΔEc with the precision of ±10 meV.Keywords
This publication has 18 references indexed in Scilit:
- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVDJapanese Journal of Applied Physics, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Solid Solution Softening and Solid Solution Hardening in Concentrated KCl–KBr Model CrystalsJapanese Journal of Applied Physics, 1984
- On the adjustability of the “abrupt” heterojunction band-gap discontinuitySurface Science, 1983
- Band discontinuities and interface Fermi-level positions in Ge–GaAs(110) heterojunctionsJournal of Vacuum Science & Technology B, 1983
- Heterojunction interface formation: Si on Ge, GaAs, and CdSJournal of Vacuum Science & Technology A, 1983
- Current Transport in Al/InAlAs/InGaAs HeterostructuresPhysica Status Solidi (a), 1982
- Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface PotentialsPhysical Review Letters, 1980
- Selective Etching of III‐V Compounds with Redox SystemsJournal of the Electrochemical Society, 1976
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974