Temperature dependence of the two-dimensional electronic density of states in disordered metal films

We present measurements of the temperature dependence of the conductance of a tunnel junction of the form Al/oxide/disordered-granular-Ag-film at low temperatures. From these measurements we deduce that the logarithmic corrections to the two-dimensional density of states due to disorder-enhanced Coulomb interactions depend on temperature. Specifically, for sheet resistances 1.35 kΩ/□$R_{\square }$Ω/□ and temperatures 0.07 KT$k_B$T.