Diffusion of delta doped boron in silicon following oxidation

4 February 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (3) , 263-264
https://doi.org/10.1049/el:19930180

Abstract

Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing.

Keywords

SI:B
RTP
SI WAFERS
LOW TEMPERATURE PROCESSING
ACTIVATION ANNEAL
SI:B DOPED DELTA LAYER
SEMICONDUCTORS
OXIDATION ENHANCED DIFFUSION
B DIFFUSION
PLASMA OXIDATION
RAPID THERMAL PROCESSING

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