Use of Au/Te/Ni films for ohmic contact to GaAs
- 1 September 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (9) , 301-302
- https://doi.org/10.1109/edl.1983.25741
Abstract
Ohmic contacts to n-type GaAs are usually fabricated by alloying AuGe/Ni films on GaAs. Ge acts as a donor to GaAs for fabrication of the ohmic contact. In an attempt to replace Ge, which is an amphoteric impurity, with a group VI element to improve on the ohmic contact resistivity, experiments were done with AuTe and AuTe/Ni contacts. A very low resistivity of ∼5 × 10-7Ω.cm2was obtained by alloying 1700 Å of AuTe film with 300 Å of nickel on top at 510°C. This is the lowest contact resistivity obtained with any material other than AuGe/Ni on n-type GaAs.Keywords
This publication has 4 references indexed in Scilit:
- Chapter 1 Ohmic Contacts to III-V Compound SemiconductorsPublished by Elsevier ,1981
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAsSolid-State Electronics, 1975
- Transport Properties of the Gold Germanium Gallium Arsenide Metal Semiconductor SystemJournal of Applied Physics, 1971