Strict thermal nitridation selectivity between Si and Ge used as a chemical probe of the outermost layer of Si1−xGex alloys and Ge/Si(001) or Si/Ge(001) heterostructures
- 1 July 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (4) , 2699-2704
- https://doi.org/10.1116/1.587234
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