Photo-induced tunnel currents in Al--Au structures
- 15 October 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 12 (8) , 3453-3457
- https://doi.org/10.1103/physrevb.12.3453
Abstract
A study of photo-induced tunnel currents in Al- -Au diode structures is presented. It includes measurements of both spectral dependence and voltage dependence. The experimental results obtained can be accounted for by an analysis based on the trapezoidal model for the oxide barrier shape. The data suggest that hot-electron attenuation in the layer is insignificant.
Keywords
This publication has 15 references indexed in Scilit:
- Photoemissive determination of the barrier profile in Al-Al2O3-Al tunnel junctionsPhysica Status Solidi (a), 1971
- Photoemission Studies on Thin Metal‐Insulator‐Metal SandwichesPhysica Status Solidi (b), 1967
- Hot-Electron Attenuation in ThinFilmsPhysical Review Letters, 1965
- Photocurrents Through Thin Films of Al2O3Journal of Applied Physics, 1965
- Photoemissive Determination of Barrier Shape in Tunnel JunctionsPhysical Review Letters, 1965
- Electron Tunneling through Asymmetric Films of Thermally Grown Al2O3Journal of Applied Physics, 1964
- ENERGY DISTRIBUTION OF HOT ELECTRONS IN ALUMINUMApplied Physics Letters, 1963
- Electron Emission from Thin Al-Al2O3-Au StructuresJournal of Applied Physics, 1962
- Tunnel Emission into VacuumJournal of Applied Physics, 1962
- Operation of Tunnel-Emission DevicesJournal of Applied Physics, 1961