Photo-induced tunnel currents in Al-Al2O3-Au structures

Abstract
A study of photo-induced tunnel currents in Al-Al2 O3-Au diode structures is presented. It includes measurements of both spectral dependence and voltage dependence. The experimental results obtained can be accounted for by an analysis based on the trapezoidal model for the oxide barrier shape. The data suggest that hot-electron attenuation in the Al2 O3 layer is insignificant.

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