Effect of heat treatment on the nature of traps in epitaxial GaAs
- 22 January 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (2) , 52-53
- https://doi.org/10.1049/el:19760042
Abstract
By annealing v.p.e. GaAs at increasing temperatures, the commonly observed 0.83 eV electron trap in v.p.e. and bulk GaAs is removed and a 0.64 eV hole trap, also detected in l.p.e. GaAs, is introduced. The results indicate that these electron and hole traps are related to Ga and As vacancies, respectively.Keywords
This publication has 0 references indexed in Scilit: