Fluidic self-assembly for the integration of GaAs light-emitting diodes on Si substrates
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (6) , 706-708
- https://doi.org/10.1109/68.300169
Abstract
The integration of GaAs optoelectronic devices on Si VLSI is important for many high-bandwidth communication applications. In this paper we describe a novel technique for the quasi-monolithic integration of GaAs light-emitting diodes on Si substrates that utilizes fluid transport and shape differentiation for placement and orientation. GaAs light-emitting diodes fabricated into trapezoidal blocks are suspended in a carrier fluid and deposited over holes etched in Si for integration. Top-side ring contact and bottom electrical contact are fabricated on the blocks prior to integration.Keywords
This publication has 6 references indexed in Scilit:
- Fabrication of a GaAs-AlGaAs GRIN-SCH SQW laser diode on silicon by epitaxial lift-offIEEE Photonics Technology Letters, 1991
- Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laserApplied Physics Letters, 1990
- Stimulated emission from monolayer-thick AlxGa1−xAs-GaAs single quantum well heterostructuresApplied Physics Letters, 1990
- Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuitsElectronics Letters, 1990
- Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substratesIEEE Photonics Technology Letters, 1989
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984