Optimization of the proximity parameters for the electron beam exposure of nanometer gate-length GaAs metal–semiconductor field effect transistors

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Abstract
Proximity parameters are determined for the electron beam exposure of high-resolution poly(methylmethacrylate) resist for the particular application of defining submicron gate lengths for GaAs metal–semiconductor field effect transistor (MESFET) structures. A ring-shaped exposure cell is used to determine the various parameters of the popularly used double Gaussian approximation of the proximity function. The results are shown to be accurate for gate lengths in the range 0.1–0.5 μm. Using this technique for gate delineation, it is shown that very high performance GaAs MESFET devices and circuits can be achieved at sub-0.5-μm dimensions.

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