MRAM with improved magnetic tunnel junction material
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Summary form only given. Increasing output and decreasing switching field distribution are very important for the development of magnetic tunnel junction (MTJ) materials, in order to achieve a high capacity MRAM. We introduce an amorphous MTJ material with excellent characteristics, which is evaluated through the MRAM/MTJ test element groups (TEG) with a MOS circuit.Keywords
This publication has 1 reference indexed in Scilit:
- Micromagnetics of spin valve memory cellsIEEE Transactions on Magnetics, 1996