Effective masses in Sn-doped Ga1−xAlxAs (x<0.33) determined by the Shubnikov–de Haas effect
- 1 November 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (9) , 3481-3484
- https://doi.org/10.1063/1.335771
Abstract
The first direct effective mass measurements of electrons in metalorganic vapor phase epitaxy (MOVPE) Sn-doped Ga1−xAlxAs (x<0.33) epilayers from Shubnikov–de Haas (SdH) oscillations are reported. The m*eΓ values of the conduction band were obtained up to x=0.3. These data, corrected for nonparabolicity, were compared to values calculated by the k ⋅ p model, taking into account the disorder bowing.This publication has 22 references indexed in Scilit:
- High purity GaAs grown by the hydride vpe processJournal of Electronic Materials, 1983
- Scattering parameters from an analysis of the hall electron mobility in Ga1−Al As alloysJournal of Physics and Chemistry of Solids, 1982
- Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET'sJournal of Crystal Growth, 1981
- Non‐Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs AlloysPhysica Status Solidi (b), 1981
- Electron transport and band structure ofalloysPhysical Review B, 1980
- Deep levels in Ga1−xAlxAs under pressureApplied Physics Letters, 1980
- An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAs-GaAs solar cellsApplied Physics Letters, 1977
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Some optical properties of the AlxGa1−xAs alloys systemJournal of Applied Physics, 1976
- GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room TemperatureJournal of Applied Physics, 1970