Room temperature 600 mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE

7 January 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (1) , 91-93
https://doi.org/10.1049/el:19930060

Abstract

Continuous wave output power levels of 600 mW at 25°C are reported from 100 μm wide, 300 μm long GaInAs/GaAs/GaInP large area laser diodes grown by CBE without any facet treatment. At these levels, the delivered current is 2 A, with an associated voltage of less than 1.7 V. The characteristic temperature of the structure is 95 K.

Keywords

ROOM TEMPERATURE OPERATION
SEMICONDUCTOR LASERS
CW OUTPUT POWER LEVELS
GAINAS-GAAS-GAINP
1.7 V
2 A
LARGE AREA LASER DIODE
600 MW
CBE
25 DEGC

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