GaAs varactor diodes for u.h.f. TV tuners fabricated by ion implantation
- 5 January 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (1) , 9-10
- https://doi.org/10.1049/el:19780007
Abstract
Gallium-arsenide varactor diodes have been developed by using ion implantation techniques. Diode series resistance is around 0.25 Ω and uniform among diodes. The standard deviation of resistance distribution is 11.6%. Capacitance variation ratio, C3/C25, is about 5.7.Keywords
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