Epitaxial growth and interface parameters of Si layers on GaAs(001) and AlAs(001) substrates
- 1 July 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (4) , 2225-2232
- https://doi.org/10.1116/1.585725
Abstract
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