Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy
- 19 June 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (25) , 3474-3476
- https://doi.org/10.1063/1.113768
Abstract
Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.Keywords
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