Plasma-heating induced intensity-dependent gain in semiconductor lasers
- 30 January 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (5) , 559-561
- https://doi.org/10.1063/1.114012
Abstract
Starting from a set of equations derived from a microscope theory we show that the familiar nonlinear gain of the form a/(1+I/Is) introduced in semiconductor laser rate equations phenomenologically should be replaced by a more general form of a/(1+I/Is)b. The new scaling exponent b depends on the relaxation constant γT that describes the rate of heat dissipation from plasma to the lattice due to carrier‐phonon scattering.Keywords
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